To provide a manufacturing method of a nitride-based semiconductor device that has a high-quality nitride-based semiconductor layer, and can stably manufacture the nitride-based semiconductor device having improved element characteristics and high reliability with improved reproducibility.
When a semiconductor laser device is to be manufactured, a low-temperature buffer layer 2 is grown on a sapphire substrate 1 at a growth rate of 25-30 /sec. On the low-temperature buffer layer 2, an n-GaN layer 3, a crack prevention layer 4, an n-clad layer 5, an n-guide layer 6, an MQW active layer 7, a p-carrier block layer 8, a p-guide layer 9, a p-clad layer 10, and a p-contact layer 11 are grown successively. By growing the low- temperature buffer layer 2 at this sort of fast growth speed, the improved, low-temperature buffer layer 2 can be obtained stably with improved reproducibility, thus achieving stable, improved crystallinity and electric characteristics in each of the layers 3-11.
DAIHO HIROKI
HAYASHI NOBUHIKO
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