Title:
METHOD FOR FORMING PATTERNED POLYSILAZANE FILM
Document Type and Number:
Japanese Patent JP3414708
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve decomposition time of polysilazane in an exposed photosen sitive polysilazane composition, elimination of the development residue of the patterned polysilazane film and adhesion property between the patterned polysilazane film and a substrate, in the method for forming a patterned polysilazane film by applying the photosensitive polysilazane composition, containing polysilazane and a photoacid producing agent, exposing and develop ing.
SOLUTION: The photosensitive polysilazane composition, containing polysilazane and a photoacid generating agent, is applied on a substrate, and after being exposed according to a pattern, it is mounted on a heating plate and brought into contact with gas controlled by humidification so as to be ≥40% RH or higher, while the substrate is heated to ≥30°C, for example, and then developed with an alkali developer, to form the polysilazane film with a positive pattern.
Inventors:
Tatsuro Nagahara
Hideki Matsuo
Hideki Matsuo
Application Number:
JP2000262703A
Publication Date:
June 09, 2003
Filing Date:
August 31, 2000
Export Citation:
Assignee:
Clariant Japan Co., Ltd.
International Classes:
G03F7/075; G03F7/38; H01L21/027; (IPC1-7): G03F7/38; G03F7/075; H01L21/027
Domestic Patent References:
| JP2000181069A | ||||
| JP10319597A | ||||
| JP5258374A |
Attorney, Agent or Firm:
Hiroki Kanao (1 person outside)