Title:
METHOD FOR FORMING RESIST PATTERN
Document Type and Number:
Japanese Patent JPH11186137
Kind Code:
A
Abstract:
To reduce halation without complicating a process and without deteriorating a resist pattern form and deteriorating focus depth.
A film to be worked 12 is formed on a semiconductor substrate 11 having a step and a resist film 13 is applied on it. The film thickness of the resist film 13 at a step base is selected so that the sensitivity of resist becomes minimum. Then, ultraviolet exposure is executed by providing a mask 14. Then, development is executed by using alkali developer and the resist film 13 of a desired pattern is obtained.
Inventors:
YOSHINO HIROSHI
ITANI TOSHIRO
HASHIMOTO SHUICHI
YAMANA SHINJI
YOSHII TAKESHI
SAMOTO NORIHIKO
KASAMA KUNIHIKO
ITANI TOSHIRO
HASHIMOTO SHUICHI
YAMANA SHINJI
YOSHII TAKESHI
SAMOTO NORIHIKO
KASAMA KUNIHIKO
Application Number:
JP35260497A
Publication Date:
July 09, 1999
Filing Date:
December 22, 1997
Export Citation:
Assignee:
NEC CORP
International Classes:
G03F7/004; G03F7/16; H01L21/027; (IPC1-7): H01L21/027; G03F7/004; G03F7/16
Attorney, Agent or Firm:
Yusuke Omi