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Title:
METHOD FOR FORMING SILICON OXIDE FILM OF UNIFORM FILM THICKNESS ON THREE-DIMENSIONAL CONTAINER MADE OF PLASTIC MATERIAL
Document Type and Number:
Japanese Patent JP3022229
Kind Code:
B2
Abstract:

PURPOSE: To coat a container with a transparent and uniform film superior in gas barrier properties by a method wherein an earth electrode is disposed over a film-forming surface of a container so that a distance between the surface of the container and the surface of the electrode is substantially constant and larger than a distance between a high-frequency electrode and the film-forming surface of the container, and a silicon oxide is deposited under specific conditions.
CONSTITUTION: When a film is applied to an outer surface of a container 9, a distance between a high-frequency electrode 10 and a film-forming surface of a container 9 is determined to 10mm or less, and a distance between an earth electrode 11 and the film-forming surface of the container 9 is constant and larger than the distance between the film-forming surface and the high-frequency electrode 10. A silicon oxide film is deposited with a uniform film thickness on the surface of the container 9 opposed to the earth electrode 11 under a discharge gas pressure of 0.0005-0.05-torr by introducing a plasma of a silicon oxide generated by a CVD method into between the container 9 and the earth electrode 11. In this manner, a uniform film of such an ultra-precise film thickness as to have, for example, a film thickness difference of 200&angst or less is formed on the container 9 of a three-dimensional structure for remarkably improving gas barrier properties.


Inventors:
Namiki Permanent
Application Number:
JP34080094A
Publication Date:
March 15, 2000
Filing Date:
December 26, 1994
Export Citation:
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Assignee:
Toyo Seikan Co., Ltd.
International Classes:
B65D1/00; B32B9/00; C23C14/04; C23C16/04; C23C16/40; C23C16/42; C23C16/50; (IPC1-7): B65D1/09; B32B9/00; C23C16/40; C23C16/42; C23C16/50
Domestic Patent References:
JP2122924A
JP5345831A
Attorney, Agent or Firm:
Hideo Watanabe