PURPOSE: To form an inorganic film which is relatively thick while being equal to or more than organic SOG by applying an application liquid containing a compound which contains polysilazane and phenol hydroxyl group onto a ground and modifying the obtained film to silicon oxide film when forming the silicon oxide film.
CONSTITUTION: The 20wt.% xylene solution of polysilazane, where 10wt.% phenol is added to polysilazane with a molar weight of 3000, is applied to silicon substrate l where aluminum wiring 2 with a wiring thickness of 8,000 (0.8μm) is provided by spin-coating. Then, heat treatment is made for three minutes at 250°C for flattening after drying. Then, the obtained film is heat-treated for 30 minutes at 450°C under oxygen atmosphere to obtain silicon oxide film 3'. The silicon oxide film 3' can be formed by a relatively thick film of 0.5μm or longer which is useful for flattening a ground step by the formation method of the silicon oxide film 3'.
FUKUYAMA SHUNICHI
KOBAYASHI TOMOKO
OKURA YOSHIYUKI
