Title:
METHOD FOR GROWING SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JP3812573
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for growing a semiconductor crystal, wherein a ratio of a mixed crystal and a concentration of impurities can be kept constant in the longitudinal direction of a crystal in growing the semiconductor crystal by a vertical Bridgeman method.
SOLUTION: A quartz crucible and a thermocouple inserting tube covered around it with a heat insulating material are put in a vertical crystal-growing furnace where a plurality of heaters are installed upward and downward to control output power independently. A thermocouple is inserted freely movably upward and downward, into the thermocouple inserting tube. Heat from heaters is indirectly given to a raw material melt/solid in the crucible through the insulating material. Heat upward and downward is greater than heat crossing the insulating material covering the crucible, heat flowing in a solid-liquid interface from upward is greater than heat flowing away downward. A difference of those quantities of heat becomes the quantity of heat running toward a center, the solid-liquid interface is convex upward and therefore a product having a good crystalline property is obtained.
Inventors:
Masato Irikura
Shinsuke Fujiwara
Shinsuke Fujiwara
Application Number:
JP2004124930A
Publication Date:
August 23, 2006
Filing Date:
April 21, 2004
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B11/00; C30B29/40; (IPC1-7): C30B11/00; C30B29/40
Domestic Patent References:
| JP1212291A | ||||
| JP5024979A |
Attorney, Agent or Firm:
Shigeki Kawase