To develop a method for growing a single crystal for which silicon carbide powder is used as a raw material, which is free from the occurrence of void defects called micropipes, and which is almost free of screw dislocation and is of high-quality.
The crystal is grown by a growing method for a silicon carbide single crystal where, in an inert atmosphere and under the condition that pressure is in the range of 100-300 Torr, a raw material is heated to 2,200-2,300°C that is 30-100°C lower than the raw material, and the growing speed of the single crystal substrate is adjusted to ≤70 μm/h. The crystal is also grown by a growing method for a silicon carbide single crystal where, in an inert atmosphere, an initially grown layer is formed while the initial temperature of the crystal substrate is made 2,250-2,350°C and a growing pressure is made 100-300 Torr, and then the crystal is grown while the substrate temperature and the growing pressure are decreased gradually and finally to 2,200-2,250°C and 1-20 Torr respectively.
NISHIZAWA SHINICHI
KOYANAGI NAOKI
SHOWA DENKO KK
| JPH06340498A | 1994-12-13 | |||
| JPH1160390A | 1999-03-02 | |||
| JPH10297997A | 1998-11-10 | |||
| JPS5935099A | 1984-02-25 |