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Patent Searching and Data


Title:
METHOD OF GROWING SINGLE CRYSTAL AND GROWING DEVICE
Document Type and Number:
Japanese Patent JP2002104896
Kind Code:
A
Abstract:

To provide a method and a device of simultaneously growing plural single crystals stably from one crucible using a crucible of same size as before or larger size than before.

The method and device of manufacturing the single crystals are characterized in that in the method of manufacturing the single crystal rods, a magnetic field is impressed in a direction perpendicular to the axes of growing crystals in molten liquid in the crucible when pulling up the single crystals out of the molten liquid of raw material in the crucible, and two or more crystals are made to grow at the same time, out of a part of high temperature and/or a part of low temperature, by making the part of high temperature and/or the part of low temperature generated on the surface of the molten liquid in the crucible always stay at a fixed place.


Inventors:
KIMURA MASAKI
Application Number:
JP2000294624A
Publication Date:
April 10, 2002
Filing Date:
September 27, 2000
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK
SHINETSU CHEMICAL CO
International Classes:
C30B15/00; C30B15/26; C30B29/06; (IPC1-7): C30B15/00; C30B15/26; C30B29/06
Attorney, Agent or Firm:
Mikio Yoshimiya