Title:
METHOD FOR GROWING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH01115890
Kind Code:
A
Abstract:
PURPOSE:To enable increase in drum part ratio of a single crystal to the total crystal and improvement in yield of wafers, by using plural seed crystals in growing bulk single crystals by the Czochralski method. CONSTITUTION:In a method for growing bulk single crystals 3 by the Czochralski method, plural crystals 2 to be used as seed crystals are employed to carry out crystal growth. The time required for a step of 'shouldering' necessary for growing the bulk single crystals can be reduced by adopting the above-mentioned method to contrive improvement in operating efficiency. Ingots having a long drum part can be also obtained.
More Like This:
| WO/2024/124127 | FLOAT-ZONE BOULE GROWTH USING GAS PRECURSORS |
| JPS60176990 | CHUCKING DEVICE OF LIFTING MACHINE |
| WO/2002/092885 | ELECTRICALLY CONDUCTIVE CRYSTAL SEED CHUCK ASSEMBLY |
Inventors:
KAKIMOTO KOICHI
Application Number:
JP27325487A
Publication Date:
May 09, 1989
Filing Date:
October 30, 1987
Export Citation:
Assignee:
NEC CORP
International Classes:
C30B15/32; C30B15/36; H01L21/208; (IPC1-7): C30B15/32; C30B15/36; H01L21/208
Attorney, Agent or Firm:
Chieko Tateno
Previous Patent: METHOD FOR GROWING SINGLE CRYSTAL
Next Patent: COOPERATION SYSTEM BETWEEN WORK FLOW SYSTEM AND FORM APPLICATION
Next Patent: COOPERATION SYSTEM BETWEEN WORK FLOW SYSTEM AND FORM APPLICATION