Title:
METHOD FOR LIQUIDDPHASE EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPS56114897
Kind Code:
A
Abstract:
PURPOSE:To enable the control of the thickness of the first crystal growth layer formed from a molten liquid different from those forming a plurality of subsequent crystal growth layers, by contacting the first crystal growth layer with an unsaturated molten liquid. CONSTITUTION:When the temperatures of the molten liquids 0, 2', and 2-6 have reached definite levels, the molten liquid reservoir 13 is pulled to the direction of the arrow until the InP molten liquid 2' is brought into contact with the substrate crystal 1. Since the molten liquid 2' is in saturation, there is little dissolution of the InP from the substrate crystal to the molten liquid 2'. After a definite time interval, the temperature is decreased to effect the deposition of the saturated InP in the molten liquid 2' on the substrate crystal 1. The InP single crystal 1 grows further by this process. Then, the molten liquid of pure In 0 is brought into contact with the substrate crystal 1, and the InP is dissolved in In to the saturated concentration. By selecting the contact time, the desired thickness of the InP single crystal layer can be dissolved in the molten liquid of In 0. After the treatment, the InP layers 2-6 are deposited successively to the substrate crystal to obtain the objective semiconductor crystal substrate.
Inventors:
HIGUCHI HIDEYO
IKEDA KENJI
MUROTANI TOSHIO
IKEDA KENJI
MUROTANI TOSHIO
Application Number:
JP1449080A
Publication Date:
September 09, 1981
Filing Date:
February 07, 1980
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
C30B19/00; H01L21/02; H01L21/208; (IPC1-7): C30B19/00; H01L21/02; H01L21/208