Title:
METHOD OF MACHINING SURFACE
Document Type and Number:
Japanese Patent JP3524763
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To increase the etching rate of a metal film, suppress the etching rate of a polycrystalline Si film, and avoid side etching by adding oxygen gas to a halogen-containing gas, while keeping a specified sample temperature for the metal film etching.
SOLUTION: A sample 106 is placed on a sample holder 8 heated by a sample holder temperature adjusting mechanism 111 and chucked to the sample holder 108 by a d-c power source 113, while a plasma 105 of an inert gas is generated to increase the sample temperature over higher than 100°C, and this temperature is held to conduct etching with chlorine and oxygen as an etching gas. Thus the etching rate of a tungsten film can be increased, without increasing the etching rate of a polycrystalline Si film, and hence the polycrystalline Si film can be left, without leaving a part of the tungsten film or tungsten nitride film unetched.
Inventors:
Kikkai, Motohiko
Hasegawa, Hiroshi
Akiyama, Hiroshi
Tokunaga, Takafumi
Umezawa, Tadashi
Kojima, Masayuki
Nojiri, Kazuo
Kawakami, Hiroshi
Kato, Kunihiko
Hasegawa, Hiroshi
Akiyama, Hiroshi
Tokunaga, Takafumi
Umezawa, Tadashi
Kojima, Masayuki
Nojiri, Kazuo
Kawakami, Hiroshi
Kato, Kunihiko
Application Number:
JP12844598A
Publication Date:
May 10, 2004
Filing Date:
May 12, 1998
Export Citation:
Assignee:
HITACHI LTD
HITACHI TECHNO ENG CO LTD
HITACHI ULSI SYSTEMS CO LTD
HITACHI TECHNO ENG CO LTD
HITACHI ULSI SYSTEMS CO LTD
International Classes:
H05H1/46; H01L21/00; H01L21/302; H01L21/3065; H01L21/3213; (IPC1-7): H01L21/3065; H05H1/46
Attorney, Agent or Firm:
特許業務法人第一国際特許事務所
特許業務法人第一国際特許事務所 （外１名）
特許業務法人第一国際特許事務所 （外１名）
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