METHOD FOR MANUFACTURING GAAS MESFET WITH THIN LAYER ION IMPLANTED LAYER

Title:

METHOD FOR MANUFACTURING GAAS MESFET WITH THIN LAYER ION IMPLANTED LAYER

Document Type and Number:

Japanese Patent JPH065632

Kind Code:

A

Abstract:

PURPOSE: To provide a method of manufacturing GaAs MESFET in which the short channel effect thereof is weakened by implanting thin layer ions during the manufacturing step of high performance GaAs device as well as GaAs LSI.

CONSTITUTION: In order to stably perform thin layer ion implanting step in the title manufacturing method of GaAs MESFET, the ions are implanted making the angle of substrate 3 with beams 2 not exceeding 45° while sustaining the implanting energy within the range of 60-200keV.

Inventors:

SUZUKI YUZURU
NAKAMURA YOSHIO
KIKUTA TOSHIO

Application Number:

JP18322892A

Publication Date:

January 14, 1994

Filing Date:

June 17, 1992

Export Citation:

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Assignee:

FURUKAWA ELECTRIC CO LTD

International Classes:

H01L21/265; H01L21/338; H01L29/812; (IPC1-7): H01L21/338; H01L21/265; H01L29/812

Attorney, Agent or Firm:

Kiyoshi Minoura

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