Title:
ＩＩＩ族窒化物半導体デバイスの製造方法
Document Type and Number:
Japanese Patent JP7182105
Kind Code:
B2
Abstract:
To provide a method for manufacturing a group III nitride semiconductor device, by which a GaN substrate can be utilized efficiently.SOLUTION: A method for manufacturing a group III nitride semiconductor device comprises: a first sticking step of sticking a first group III nitride substrate to a group III nitride support substrate; a first formation step of forming a group III nitride semiconductor device on the first group III nitride substrate; a separation step of applying a laser beam to the resultant substrate in the vicinity of an interface of the first group III nitride substrate and the support substrate to separate the first group III nitride substrate and the support substrate; a second sticking step of recycling the separated support substrate to stick a second group III nitride substrate to the recycled support substrate; and a second formation step of forming a group III nitride semiconductor device on the second group III nitride substrate. In the separation step, a focal point of the laser beam is aligned on a side closer to the first group III nitride substrate with respect to the interface, and the first group III nitride substrate and the support substrate are separated while using, as a boundary, a plane where the focal point of the laser beam is aligned.SELECTED DRAWING: Figure 2c
Inventors:
Ayako Iwasawa
Okayama Yoshio
Okayama Yoshio
Application Number:
JP2019093054A
Publication Date:
December 02, 2022
Filing Date:
May 16, 2019
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L21/02; B23K26/53; C30B29/38; H01L29/20
Domestic Patent References:
| JP2011243968A | ||||
| JP20121432A | ||||
| JP201140564A | ||||
| JP20055699A | ||||
| JP2017523603A |
Attorney, Agent or Firm:
Michiko Matsutani
Hiroshi Okabe
Kazuhisa Inaba
Hiroshi Okabe
Kazuhisa Inaba