To provide a method of manufacturing a nitride semiconductor light-emitting element capable of forming a mechanically-stable wiring electrode with certainty from a light-emitting element surface from which a growth substrate for deposition is peeled out.

A method includes: a step of forming a device structure layer 12 on a growth substrate 11; a step of forming a first electrode layer 13 at a position corresponding to a light-emitting element; a step of forming a structure protection sacrificial layer 14 around the first electrode layer; an element isolation step of forming an element isolation groove 17 on the device structure layer; a bonding step of bonding a supporting substrate 20 to the device structure layer side; a step peeling the growth substrate; a step of forming a forward taper groove 24 separating the device structure layer into the light-emitting element having the first electrode layer and a reverse taper part 26 on the structure protection sacrificial layer; a lift-off step of etching the structure protection sacrificial layer to lift off the reverse taper part; a step of forming a second electrode layer 28 on an exposure surface of the device structure layer; and a wiring electrode layer formation step of forming an insulating layer on a side wall of the light-emitting element to form a wiring electrode layer 29 electrically connected with the second electrode layer.