Title:
酸化物半導体膜、積層体及び酸化物半導体膜の製造方法
Document Type and Number:
Japanese Patent JP7105703
Kind Code:
B2
Abstract:
To provide an oxide semiconductor film having gallium as a main component with an excellent ohmic characteristic.SOLUTION: In an oxide semiconductor film having gallium as a main component, a specular reflectance of a front face of the oxide semiconductor film is 15% or less under a condition of 633 nm of an incidence light wavelength and 45° of an incidence angle.SELECTED DRAWING: Figure 1
Inventors:
Takenori Watanabe
Application Number:
JP2019001035A
Publication Date:
July 25, 2022
Filing Date:
January 08, 2019
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
H01L21/365; C23C16/40; H01L21/368
Domestic Patent References:
| JP2014031300A | ||||
| JP2015196603A | ||||
| JP2017022188A | ||||
| JP2007254174A | ||||
| JP2020092125A |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi