To manufacture a semiconductor chip having a semiconductor element which assures good property without undergoing the influence of a heat treatment when an insulating film is formed for insulating a through electrode and a silicon substrate.
To form the semiconductor chip 50 having the through electrode 33a, a recess 20 is formed in a predetermined depth to a silicon substrate 10. Then, a side wall insulating film 21 is formed for insulating through electrode 33a and a silicon substrate 10 exposed in the recess 20. After the side wall insulating film 21 is formed, the semiconductor element 6 is formed on the front surface of the silicon substrate 10. Then, the recess 20 is filled up with the through electrode film 33 made of a conductive material, and by grinding from the rear surface side of the silicon substrate 10, the conductive material in the recess 20 is exposed to the rear surface, and the through hold 33a is formed.
Katsuhiro Ito
Ishibashi Masayuki
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