Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001217415
Kind Code:
A
Abstract:
To reduce film thickness of a silicon oxide film interposing in an interface between a single crystal silicon and a tantalum oxide film, and to prevent leakage current in the tantalum oxide film.
The approximately 5 nm thick tantalum oxide film 13A is deposited on a silicon oxide film 12 formed on substrate 11 of a single crystal silicon by means of CVD method and the like. A tantalum oxide film 13B composed of excessive oxygen is formed by processing heat treatment to the tantalum oxide film 13A in an oxygen radical. Therefore, a crystallized tantalum oxide film 13C is obtained by subjecting the tantalum oxide film 13B composed of excessive oxygen to heat treatment in an atmosphere having no tendency to oxidation.
Inventors:
YAMAMOTO KAZUHIKO
Application Number:
JP2000022363A
Publication Date:
August 10, 2001
Filing Date:
January 31, 2000
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L29/78; H01L21/316; (IPC1-7): H01L29/78; H01L21/316
Attorney, Agent or Firm:
Hiroshi Maeda (1 person outside)
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