To solve the problem, wherein manufacturing cost is high and adhesive remains, when a pressure sensitive adhesive sheet for semiconductor wafer protection is formed and stuck on a semiconductor wafer, in order to prevent warpage of the semiconductor wafer under a heating environment of forming process in conventional cases.

When an AlCu layer is deposited which constitutes a wiring layer 25 of the 3rd layer, a Ti layer deposited on the lower surface of the AlCu layer is maintained in elevated temperature status e.g. about 400°C, and an AlxTiy alloy layer is formed between the AlCu layer and the Ti layer. As a result, compressive stress, generated when the AlCu layer is hardened is transferred to the AlxTiy alloy layer which is hardened on the lower surface of the AlCu layer, and amount of warpage X of a semiconductor wafer 41 containing a substrate 1, can be reduced. In an exposure device, the semiconductor wafer 41 is surely chucked and can be fixed.