Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2009105105
Kind Code:
A
Abstract:
To provide a method of manufacturing a semiconductor device executing stable device separation by using selective epitaxial growth.
In the method of manufacturing the semiconductor device manufactured by stacking a semiconductor layer on a semiconductor substrate, when the semiconductor devices on the semiconductor substrate are separated, device units to be separated are enclosed by an insulation film, and the semiconductor device is formed by stacking the semiconductor layer in the enclosure.
Inventors:
ARAKI SHOJIRO
Application Number:
JP2007273287A
Publication Date:
May 14, 2009
Filing Date:
October 22, 2007
Export Citation:
Assignee:
YOKOGAWA ELECTRIC CORP
International Classes:
H01L21/762; H01L21/20; H01L21/76; H01L31/10