To provide a means for improving the adhesion of a semiconductor configuration to an insulating layer and to an upperlayer insulating film, in a semiconductor device having: the semiconductor configuration, called CSP (chip size package), provided on a base plate; the insulating layer provided on the base plate in a periphery of the semiconductor configuration; and the upperlayer insulating film and an upperlayer wiring, both provided on the semiconductor configuration and the insulating layer.

The semiconductor configuration 2 is provided on an upper surface of the base plate 1 through an adhesion layer 3. Adhesion-improving films 14a, 14b and 14c are provided on a side surface or an upper surface of the semiconductor configuration 2 and on the upper surface of the base plate 1, wherein the adhesion-improving films includes a silane coupling agent. The insulating layer 15 is provided on an upper surface of the adhesion-improving film 14b in the periphery of the adhesion-improving film 14a. The upperlayer insulating layer 16 is provided on an upper surface of the adhesion-improving film 14c and insulating film 15. Also, the adhesion-improving film comprising the silane coupling agent may be provided between the semiconductor configuration 2 and the adhesion layer 3 and between the base plate 1 and the adhesion layer 3.