Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023028292
Kind Code:
A
Abstract:
To provide a method for manufacturing a semiconductor device and a device for manufacturing a semiconductor device, capable of forming a crystalline semiconductor film with a simple process in semiconductor devices such as bottom-gate-TFTs and silicon solar cells.SOLUTION: A method for manufacturing a semiconductor device is characterized in that, in a thin film transistor 1 that is a semiconductor device, a silicon layer 11 that is a crystallized semiconductor film is formed by performing a CVD method or a sputtering method on a substrate 10 and intermittently heating the substrate 10.SELECTED DRAWING: Figure 1
Inventors:
AZUMA SEIICHIRO
Application Number:
JP2021133908A
Publication Date:
March 03, 2023
Filing Date:
August 19, 2021
Export Citation:
Assignee:
UNIV HIROSHIMA
International Classes:
H01L21/205; C23C14/34; C23C16/24; C23C16/46; H01L21/203; H01L21/336; H01L31/077
Attorney, Agent or Firm:
Maki Masaki