To suppress the defective growth, preserving the electric characteristics reducing the dispersion in the characteristics by implanting a semiconductor substrate with ions in high energy while heat treating the substrate at a temperature rising rate exceeding a specific value.
A field oxide film 2 is formed on a silicon single crystalline substrate 1. Next, after the formation of a silicon oxide film 3 in thickness of 7nm, p+ ions are implanted at the implantation acceleration voltage of 1.0MeV and implantation dose of 1×1014/cm2 wherein abnormally large current is observed conventionally. Next, heat treatment step is performed at the temperature rising rate of 50/sec on above at the heat teatment temperature of 1000°C. Later, the substrate surface is implanted with BF 2 at the implantation acceleration of 30KeV, dose 3E 1015cm-2, furthermore, an interlayer film 5 and an aluminum electrode 6 are formed to complete p+/n junction.
NISHIO NAOHARU
SAITO SHUICHI
