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Patent Searching and Data


Title:
METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT SUBSTRATE
Document Type and Number:
Japanese Patent JP2011165788
Kind Code:
A
Abstract:

To provide a method of manufacturing a semiconductor element substrate expanding a transfer object region by a simple method, and improving transfer accuracy.

The method of manufacturing a semiconductor element substrate includes: a drawing process of drawing a seal material 103 of a first viscosity in a frame-like form on a transfer source substrate 100 formed with a semiconductor element; an application process of applying, in the frame of the seal material 103, an adhesive 104 having a nature similar to that of the seal material 103 and having a second viscosity lower than the first viscosity; a sticking process of sticking a first transfer destination substrate 200 to the adhesive 104 application surface of the transfer source substrate 100; and a transfer process of transferring the semiconductor element from the transfer source substrate 100 to the first transfer destination substrate 200.


Inventors:
KIMURA NAOKI
Application Number:
JP2010025180A
Publication Date:
August 25, 2011
Filing Date:
February 08, 2010
Export Citation:
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Assignee:
SEIKO EPSON CORP
International Classes:
H01L27/12; H01L21/02
Attorney, Agent or Firm:
Masahiko Ueyanagi
Osamu Suzawa
Kazuhiko Miyasaka