Title:
METHOD FOR MANUFACTURING SINGLE CRYSTAL SILICON PARTICLE
Document Type and Number:
Japanese Patent JP2009167052
Kind Code:
A
Abstract:
To provide a method for manufacturing single crystal silicon particles by which many single crystal silicon particles each having a shape approximate to a sphere and containing impurities in a drastically reduced content can be manufactured collectively.
The method for manufacturing the single crystal silicon particles 3 comprises removing a projected part 12 of each single crystal silicon particle 3 having the projected part 12 in which impurities are segregated and an oxynitride film 11 formed on its surface, by polishing without substantially deteriorating the surface of each single crystal silicon particle 3. The polishing is carried out by barrel polishing.
Inventors:
TAKAHASHI MORISATO
FUKUDA JUN
TANABE HIDEYOSHI
ARIMUNE HISAO
FUKUDA JUN
TANABE HIDEYOSHI
ARIMUNE HISAO
Application Number:
JP2008006502A
Publication Date:
July 30, 2009
Filing Date:
January 16, 2008
Export Citation:
Assignee:
KYOCERA CORP
International Classes:
C30B29/06; B24B31/02; B24B31/14; C01B33/02; C30B11/00; C30B33/00; H01L21/208; H01L31/04; H01L21/02