Title:
METHOD FOR MANUFACTURING SUBSTRATE WAFER FOR LOW-DEFECT SEMICONDUCTOR COMPONENT, COMPONENT OBTAINED BY THE SAME, AND ITS USE
Document Type and Number:
Japanese Patent JP2005314216
Kind Code:
A
Abstract:
To provide an electronic component of which growth defects produced by crystallographic defects, especially pin holes, nanopipes and/or pits and hilogs are less than those of a currently known electronic element.
The method for manufacturing a substrate wafer for a low-defect semiconductor component includes (a) a process for forming a single crystal having a [0001] plane perpendicular to a c-axis thereof, (b) a process for dividing the single crystal into thin disks each having at least one disk surface to be coated, (c) a process for smoothing at least one disk surface and (d) a process for tempering at least one thin disk at a temperature higher than 1770 K.
Inventors:
CLAUDIO GORGONI
SPEIT BURKHARD
KOEHLER INGO
GUINCHARD JAQUES
BLAUM PETER
BEIER WOLFRAM
SPEIT BURKHARD
KOEHLER INGO
GUINCHARD JAQUES
BLAUM PETER
BEIER WOLFRAM
Application Number:
JP2005055656A
Publication Date:
November 10, 2005
Filing Date:
March 01, 2005
Export Citation:
Assignee:
SCHOTT AG
International Classes:
C30B29/20; C30B33/00; C30B33/02; H01L21/20; B28D5/00; (IPC1-7): C30B33/02; B28D5/00; C30B29/20; H01L21/20
Domestic Patent References:
| JPH0883802A | 1996-03-26 | |||
| JP2004235794A | 2004-08-19 | |||
| JPS5795899A | 1982-06-14 |
Attorney, Agent or Firm:
Tadashi Hamamoto
Yoshiaki Sato
Yoshiaki Sato