To provide a method of manufacturing thin ferroelectric film by which the occurrence of incovenience caused by the vaporization (withdrawal) of a volatile element can be eliminated at the time of manufacturing a thin ferrorelectric film containing the volatile element; and to provide a ferroelectric memory device, ferroelectric element, ink-jet recording head, ink-jet printer, surface acoustic wave element, frequency filter, oscillator, electronic circuit, and electronic equipment.
The method of manufacturing the thin ferroelectric film containing the volatile element includes a normal-temperature step of forming the precursor 5a of the thin ferroelectric film on a substrate at a normal temperature by the physical vapor phase method in a vacuum process, and a high-temperature step of forming a piezoelectric layer (ferroelectric film) 5 from the precursor 5a by heat-treating the substrate having the formed precursor 5a under an atmospheric pressure containing oxygen or under a pressurized condition.
HIGUCHI AMAMITSU
MIYAZAWA HIROSHI
Masatake Shiga
Masakazu Aoyama
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