PURPOSE: To measure the maximum heat treatment temperature of a body to be measured readily without contaminating surrounding parts, by providing layered films of platinum and gold at a part of the surface of the body to be measured, and measuring the maximum value of the heat treatment temperature based on the change in resistance value of the thin gold film.
CONSTITUTION: On a silicon wafer 1, a Pt film 5 and an Au film 6 are formed through an Si oxide film 2, a Ti film 3 and a Ti nitride film 4. When heat treatment is performed in the layered film system of Pt and Au obtained in this way, the Pt is diffused into the Au film. The Au film is changed into an Au/Pt film including the Pt. In this case, the resistivity ρAu/Pt of the Au/Pt film is determined by the concentration of the Pt included in the film. This value is determined by the temperature T, which determines the diffusing phenomenon, heat treatment time (t) and the thickness of the Au film in an univocal manner. Therefore, when the heat treatment time (t) and the thickness of the Au film are already known, the heat treatment temperature T of the wafer can be obtained from the value of ρAu/Pt.
KANAMORI SHUICHI
IZUMI KATSUTOSHI
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