To provide a method for monitoring a thin film deposition process by which whether the thin film to be deposited has desired film quality or not can be judged during the process, and to provide a thin film deposition system.
In the monitoring method, the intensities of hydrogen alpha rays and oxygen radiation radiated from plasma on thin film deposition are measured, and each intensity and the standard intensity of each radiation at the time when a thin film with desired film quality is obtained are compared, so that whether the thin film with desired film quality is deposited or not is judged. The thin film deposition system comprises: an optical spectrometer 12 measuring the intensity of each radiation; a storing means storing the standard intensity of each radiation; and a judging means comparing the measured each intensity and the standard intensity of each radiation and judging whether the measured each intensity lies in a prescribed range or not.
KASHIMA HIROTO
TSUJINO MANABU
KUSAKA NAOTO
Tadashi Takahashi
Takashi Watanabe
Masakazu Aoyama
Suzuki Mitsuyoshi
Kazuya Nishi
Yasuhiko Murayama