PURPOSE: To form a pattern of a diamond film simply, by selectively growing a diamond film on a part, which is not masked with a negative pattern film, and removing the negative pattern film.
CONSTITUTION: A negative pattern film 12 comprising a mask material is formed on a substrate 11. A diamond film 13 is selectively grown on the exposed surface of the substrate 11, which is not covered with the mask material, in an intended pattern. The negative pattern film 12 is removed. Thus, an element, in which the intended pattern of the diamond film 13 is formed on the substrate 11, is obtained. The substrate 11 comprises metals of groups IVa, Va and VIa in the periodic table, an Si substrate, carbide and the like. The mask material comprises transition metals of groups IVa, Va and VIa in the periodic table, an Si substrate, carbide and the like. Thus, the pattern of the diamond film 13 is simply formed.
IMAI TAKAHIRO
FUJIMORI NAOHARU
