Title:
METHOD FOR PREVENTING SHORT-CIRCUIT BETWEEN CONTACT HOLE AND METAL WIRING
Document Type and Number:
Japanese Patent JP3958002
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method for preventing short-circuit between a contact hole and metal wiring in a semiconductor device.
SOLUTION: This method consists of a step for forming a first conducting layer 80 in the bottom of each contact hole 15 so as to partially fill the contact hole 15, a step for forming a liner layer 50 on an inner wall of each contact hole 15 in order to reduce an aperture of the contact hole 15, a step for forming a trench for the metal wiring 25, and a step for forming a second conducting layer on the first conducting layer 80 in each contact hole 15.
Inventors:
Chao-Chue Woo
Application Number:
JP2001232505A
Publication Date:
August 15, 2007
Filing Date:
July 31, 2001
Export Citation:
Assignee:
ProMOS Technologies Inc.
International Classes:
H01L21/28; H01L21/768; H01L21/8242; H01L27/108; (IPC1-7): H01L21/768; H01L21/28; H01L21/8242; H01L27/108
Domestic Patent References:
| JP11297819A | ||||
| JP2004514275A |
Foreign References:
| US5792687 | ||||
| US5864156 |
Attorney, Agent or Firm:
Tadahiko Ito