METHOD OF PRODUCING FIELD EFFECT TRANSISTOR - AMERICAN TELEPHONE & TELEGRAPH

Title:

METHOD OF PRODUCING FIELD EFFECT TRANSISTOR

Document Type and Number:

Japanese Patent JPS59219967

Kind Code:

A

Abstract:

A method of fabricating field effect transistors which includes control of threshold potential by an ion implantation limited to the active channel area. The active channel area is defined by a photoresist pattern. Ions are implanted into the exposed area in a concentration to achieve a desired threshold. Appropriate metals are deposited over the channel area to form a gate electrode. The photoresist is lifted off leaving the gate electrode in position over the channel area. If desired, a layer of polysilicon can be included prior to resist formation and later removed by an etchant which does not attack the gate electrode.

Inventors:

ERIIZAA KINSUBURON
UIRIAMU TOOMASU RINCHI
TOOMASU EDOWAADO SUMISU

Application Number:

JP8417584A

Publication Date:

December 11, 1984

Filing Date:

April 27, 1984

Export Citation:

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Assignee:

AMERICAN TELEPHONE & TELEGRAPH

International Classes:

H01L29/812; H01L21/336; H01L21/338; H01L29/10; H01L29/78; (IPC1-7): H01L29/78

Attorney, Agent or Firm:

Masao Okabe

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