Title:
III族窒化物半導体結晶の製造方法
Document Type and Number:
Japanese Patent JP4714143
Kind Code:
B2
Abstract:
A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy (11) containing at least a group III-metal element and an alkali metal element in a reactor (1), introducing a nitrogen-containing substance (14) in the reactor (1), dissolving the nitrogen-containing substance (14) in an alloy melt (13) in which the alloy (11) has been melted, and growing group III-nitride semiconductor crystal (15) is provided. The group III-nitride semiconductor crystal (15) attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.
Inventors:
Takatomo Sasaki
Yusuke Mori
Masashi Yoshimura
Kawamura Shiro
Nakahata Seiji
Ryu Hirota
Yusuke Mori
Masashi Yoshimura
Kawamura Shiro
Nakahata Seiji
Ryu Hirota
Application Number:
JP2006513505A
Publication Date:
June 29, 2011
Filing Date:
March 30, 2005
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
Yusuke Mori
Yusuke Mori
International Classes:
C30B29/38; C30B9/12; C30B11/00; C30B11/06; C30B19/02; C30B29/40; H01L21/208; H01L33/00; H01S5/323
Domestic Patent References:
| JP2000012900A | 2000-01-14 | |||
| JP2001102316A | 2001-04-13 | |||
| JP2004224600A | 2004-08-12 |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai