To provide a method for producing polycrystalline silicon which prevents contamination caused by foreign substances generated due to a dummy bar used in initial melting and can improve yield.

In the method for producing polycrystalline silicon by an electromagnetic induction method, a dummy bar in which silicon 5 is bonded to the upper surface of a dummy bar body 4a is used as a dummy bar 4 for supporting a silicon raw material in a mold 2 when the silicon raw material is initially melted. A dummy bar in which silicon is allowed to exist on the upper surface of a dummy bar body by cutting a dummy bar bonded to an ingot at an ingot part above the bonded part after the end of casting or a dummy bar obtained by subjecting the dummy bar to treatments including acid cleaning may be used as the dummy bar 4. Contamination by foreign substances such as silicon nitride in the case of using a conventional carbon dummy bar is suppressed and various improvements such as yield improvement can be achieved.