Title:
METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS6163031
Kind Code:
A
Abstract:
Onto the surface of an initial semiconductor structure 1, 2, 3, 4 is deposited a layer of an organic material 5 having a window 9. Layers 6', 7', and 8' are deposited on the exposed surface of the semiconductor, of which 8' is an ion-beam resisting material. Corresponding layers 6, 7, and 8 are deposited on the organic material. The organic material is then lifted off together with layers 6, 7 and 8. lon-beam milling of the semiconductor material to either side of 8' followed by removal of any remnant of 8' results in a structure having an elevated semiconductor portion carrying an electrode 6', 7'.Preferred materials are gallium arsenide for layers 1 and 3, gallium aluminium arsenides for layers 2 and 4, titanium for layers 6' and 8', and gold for layer 7'.The invention can be applied to the production of rib waveguide electrooptic devices, including phase modulators.
Inventors:
ANDORIYUU JIYURIAN NIKORASU HO
Application Number:
JP11130885A
Publication Date:
April 01, 1986
Filing Date:
May 23, 1985
Export Citation:
Assignee:
BRITISH TELECOMMUN
International Classes:
H01L21/302; G02F1/025; H01L21/027; H01L21/263; H01L21/28; H01L21/3065; H01S5/00; H01S5/042; (IPC1-7): H01L21/302; H01S3/18
Domestic Patent References:
| JPS57155383A | 1982-09-25 | |||
| JPS56107581A | 1981-08-26 |
Attorney, Agent or Firm:
Hideto Asamura