Title:
METHOD FOR SELECTIVE CRYSTAL GROWTH
Document Type and Number:
Japanese Patent JPH04175293
Kind Code:
A
Abstract:
PURPOSE:To enable highly selective crystal growth through vapor growth technique by using tantalum oxide as the non-forming surface for single crystal or polycrystal and by containing chlorine in a feedstock gas. CONSTITUTION:Firstly, tantalum oxide 1 is formed as a mask on a nonforming surface portion for single crystal or polycrystal on the surface of a single crystal substrate 2. Thence, a feedstock gas 3 containing a group V raw material (e.g. AsH3), group III raw material (e.g. triethylgallium) and chlorine is fed to grow selectively group III-V compound semiconductor crystal by vapor growth technique on the surface portion not masked with the tantalum oxide 1. Thereby, because of the presence of the chlorine in the feedstock gas, the tantalum oxide 1 will be gradually etched by the chlorine during crystal growth; therefore, through controlling the film thickness of the tantalum oxide 1, both the selective and whole growths can be performed within one growth process.
Inventors:
KAWASAKI HIDEJI
TOKUNAGA HIROYUKI
TOKUNAGA HIROYUKI
Application Number:
JP30497390A
Publication Date:
June 23, 1992
Filing Date:
November 09, 1990
Export Citation:
Assignee:
CANON KK
International Classes:
C30B25/04; C30B29/40; H01L21/205; (IPC1-7): C30B25/04; C30B29/40; H01L21/205
Attorney, Agent or Firm:
Giichi Marushima (1 person outside)