Title:
METHOD FOR SIMULATING DYNAMIC CHARACTERISTIC OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3161140
Kind Code:
B2
Abstract:
PURPOSE: To obtain a simulating method by which the dynamic characteristic of a plurality of independent semiconductor devices can be collectively resolved with accuracy while the semiconductor device are connected to external circuits.
CONSTITUTION: A plurality of independent semiconductor devices, for example, two adjacent semiconductor devices FWD 1 and IGBT 2 are completely and physically separated from each other and their dynamic characteristics are found by dividing the elements with a common lattice and using the Jacobian matrix on the two boundary lines 21 and 22 separating the elements 1 and 2 from each other as unit matrix and setting the constant term on the right side to zero, and then, introducing Neumann boundary conditions to each boundary line. Then the equations of operation of external circuit are transformed into integral form and the equations of operation of the external circuits of state of the semiconductor elements are solved as simultaneous equations.
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Inventors:
Saburo Tagami
Application Number:
JP6083893A
Publication Date:
April 25, 2001
Filing Date:
March 22, 1993
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
G06G3/10; H01L29/00; (IPC1-7): H01L29/00
Attorney, Agent or Firm:
Masaharu Shinobe