Title:
METHOD OF SIMULATING ION IMPLANTING PROCESS
Document Type and Number:
Japanese Patent JP3102372
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To accurately interpolate the ion implanting process including details of a semiconductor device, by interpolating and extrapolating the logarithmic values of channeling component dose coefficients for the total dose logarithmic value.
SOLUTION: The logarithmic values of channeling component dose coefficients are interpolated or extrapolated for the total dose logarithmic value such that when moment data of an ion implanting profile at two dosages DT.i, DT.i+1 to be interpolated or extrapolated for a dosage DT.a, amorphous component dose coefficients and channel component coefficients Dman.iDsub.i, Dsub.i+1 are given, the amorphous component dose coefficients and channel component coefficients Dman.iDsub.i, Dsub.i+1 are computed according to specified equations with the dosage DT.i, thereby accurately interpolating or extrapolating the ion implanting profile including details.
Inventors:
Susumu Asata
Kouichi Sawahata
Kouichi Sawahata
Application Number:
JP4403097A
Publication Date:
October 23, 2000
Filing Date:
February 27, 1997
Export Citation:
Assignee:
NEC
International Classes:
G06F17/50; H01L21/00; H01L21/265; (IPC1-7): H01L21/265; H01L21/00
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)