Title:
METHOD FOR SURFACE TREATMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002275667
Kind Code:
A
Abstract:
To provide a method for surface treatment by which the effective surface treatment can be performed on the surface of a Cu film.
The method includes a process of carrying out first surface treatment on the surface of a copper film 14, 20 with an acidic chemical liquid and a process of carrying out second surface treatment on the surface of the copper film treated by the first process with an alkaline chemical liquid. The first surface treatment is preferably a process to selectively remove at least either copper compounds or silicon compounds from the copper film. The second surface treatment is preferably a process to remove the anionic component remaining on the surface of the copper film by the first surface treatment.
Inventors:
UOZUMI NOBUHIRO
MIYASATO MIKIE
NAKAJIMA TAKAHITO
MIYASATO MIKIE
NAKAJIMA TAKAHITO
Application Number:
JP2001082440A
Publication Date:
September 25, 2002
Filing Date:
March 22, 2001
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C23G1/10; C23G1/20; H01L21/304; H01L21/306; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): C23G1/10; C23G1/20; H01L21/304; H01L21/306; H01L21/3205; H01L21/768
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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