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Title:
METHOD FOR TESTING HUMIDITY RESISTANCE OF RESIN-SEALED TYPE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS58186063
Kind Code:
A
Abstract:

PURPOSE: To execute the humidity resistance test of a resin-sealed type semiconductor device in a short time with high reproducibility, by setting temp. of steam atmosphere to not lower than a specified value, and bias nonapplication time to a time length not shorter than the time within which moisture can reach the surface of said device chips.

CONSTITUTION: Resin-sealed type semiconductor devices 1 are placed in a sample vessel 6 located in a thermostat 7, and terminals 10 fixed to the vessel 6 are connected to sockets fixed to insulating bases so as to apply bias. A heater 9 is installed on the outside of the vessel 6, and on the other hand, steam is fed through a pipe 8 by evaporating water 4 in a steam generating vessel 2 with a heater 3. The vessel 6 is maintained at ≥100°C and a constant humidity (≥85%), and bias nonapplication time is set to ≥10hr within which moisture can thorougly reach the surface of the chips of the devices 1, and bias application time is set,e.g. to 8hr, and a cycle of, e.g. 24hr is repeated, thus a humidity resistance test can be executed in a time shorter than the continuous bias application test, and further, reproducibility is enhanced.


Inventors:
SANO KOUICHI
TAKAHASHI MINORU
UEKI TAKEMI
NOYORI MASAHARU
HIGUCHI HIROSHI
Application Number:
JP6925382A
Publication Date:
October 29, 1983
Filing Date:
April 24, 1982
Export Citation:
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Assignee:
NIPPON TELEGRAPH & TELEPHONE
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
G01M3/20; G01N17/00; G01R27/02; G01R31/28; G01R31/30; H01L21/56; H01L21/66; G01R31/26; (IPC1-7): G01M3/00; G01N17/00; G01R31/26; G01R31/30; H01L21/66; H01L23/02
Attorney, Agent or Firm:
Shiro Mitsuishi



 
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