Title:
METHOD OF VAPOR PHASE SYNTHESIS OF DIAMOND
Document Type and Number:
Japanese Patent JPH01305896
Kind Code:
A
Abstract:
PURPOSE:To stably obtain high-purity diamond by subjecting a discharge gas to glow-arc transfer region discharge where current is less than the current in arc discharge and the gaseous temp. is lower than the temp. of hot plasma, thereby executing the chemical vapor phase deposition of the diamond. CONSTITUTION:While the discharge gas 3 and a gaseous mixture composed of gaseous hydrogen and gaseous carbon compd. as a gaseous raw material 6 are passed, a DC voltage is impressed between a cathode 1 and in anode 2 to generate the discharge 10 of the glow-arc transfer region, by which the discharge gas is heated. The heated gas is ejected in the form of a plasma jet by volumetric expansion from a nozzle 4. This plasma jet is brought into collision against a substrate 7 and the substrate is rapidly cooled to deposit the diamond film 8 on the substrate 7. The gaseous pressure between electrodes is maintained under 10- several Torr, more preferably 10-300Torr and the discharge pressure is required to be kept at several 100- several 1000V in order to generate the discharge of the glow-arc transfer region. The electrodes are preferably cooled with water so as not to melt.
Inventors:
KURIHARA KAZUAKI
SASAKI KENICHI
KAWARADA MOTONOBU
ETSUNO NAGAAKI
SASAKI KENICHI
KAWARADA MOTONOBU
ETSUNO NAGAAKI
Application Number:
JP13452388A
Publication Date:
December 11, 1989
Filing Date:
June 02, 1988
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B29/04; C23C16/26; C23C16/27; (IPC1-7): C30B29/04
Attorney, Agent or Firm:
Aoki Akira (4 outside)
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