Title:
半導体ウエハ等のワークピースを処理するための方法及び装置
Document Type and Number:
Japanese Patent JP2004500701
Kind Code:
A
Abstract:
Semiconductor wafer treatment method involves passing the heated liquid on the workpiece surface (20). The heated liquid maintains the workpiece at an elevated temperature. Ozone is introduced at the rate of more than 90 grams per hour into the chamber (15) which has the workpiece. The thickness of the liquid boundary layer formed on the workpiece through which ozone is diffused is controlled. The heated liquid solution provided on the surface is combination of water and hydrogen fluoride or hydrochloric acid. Ozone is introduced at the rate of more than 90 grams per hour with flow rate 10 lpm and concentration of 10% by weight. The deozonized water is the processing liquid which includes sulfuric acid, hydrochloric acid, or ammonium hydroxide. The thickness is controlled by rotating the workpiece at 1000 rpm or more, by adding surfactant to liquid or by spraying the liquid on the surface at controlled flow rate. The liquid contains solution of water and hydrogen fluoride or water and hydrochloric acid or combination of both. The concentration ratio of water to hydrogen fluoride and to hydrochloric acid is between 50:1:1 and 500:1:1. An independent claim is also included for semiconductor wafer treatment apparatus.
Inventors:
Eric Jay Bergman
Application Number:
JP2001512043A
Publication Date:
January 08, 2004
Filing Date:
July 21, 2000
Export Citation:
Assignee:
Semitour Incorporated
International Classes:
B08B3/00; B08B3/02; B08B3/04; B08B3/08; B08B7/00; C23G1/00; G03F7/42; H01L21/00; H01L21/304; H01L21/306; H01L21/311; (IPC1-7): H01L21/304; B08B3/08
Attorney, Agent or Firm:
Aoyama Aoi
Osamu Kawamiya
Osamu Kawamiya