Title:
シリサイド・コンタクトとその上のメタライゼーションとの間の接触抵抗を低減する方法及び構造体
Document Type and Number:
Japanese Patent JP5362965
Kind Code:
B2
Abstract:
A semiconductor structure in which the contact resistance in the contact opening is reduced as well as a method of forming the same are provided. This is achieved in the present invention by replacing conventional contact metallurgy, such as tungsten, or a metal silicide, such as Ni silicide or Cu silicide, with a metal germanide-containing contact material. The term “metal germanide-containing” is used in the present application to denote a pure metal germanide (i.e., MGe alloy) or a metal germanide that includes Si (i.e., MSiGe alloy).
Inventors:
Conal Eugene Murray
Christian laboyer
Kenneth Parker Rodbell
Christian laboyer
Kenneth Parker Rodbell
Application Number:
JP2007130825A
Publication Date:
December 11, 2013
Filing Date:
May 16, 2007
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION
International Classes:
H01L21/28; H01L21/3205; H01L21/768; H01L23/532
Domestic Patent References:
| JP2000150651A | ||||
| JP4233762A | ||||
| JP2001284284A | ||||
| JP8064599A | ||||
| JP2005079277A | ||||
| JP3120820A |
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi