Title:
MICROWAVE INTEGRATED CIRCUIT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP2574565
Kind Code:
B2
Abstract:
PURPOSE: To attain miniaturization and light weight by bonding directly a GaAs substrate having an active component and a crystal plate as an electroacoustic element through the use of a silicon oxide film or a silicon film.
CONSTITUTION: A FET 3, a varactor diode 4, and a passive chip component 5 are formed on a GaAs substrate 1. Moreover, a silicon oxide film or a silicon film 8 is formed on the GaAs substrate 1 and the GaAs substrate 1 and the crystal vibrator 2 are bonded directly. Through the constitution above, since the oscillator circuit section and the crystal resonator are integrated, miniaturization and light weight are attained.
Inventors:
EDA KAZUO
TAGUCHI YUTAKA
OGURA TETSUYOSHI
KANAHOSHI AKIHIRO
TAGUCHI YUTAKA
OGURA TETSUYOSHI
KANAHOSHI AKIHIRO
Application Number:
JP23284191A
Publication Date:
January 22, 1997
Filing Date:
September 12, 1991
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H03B5/02; H01L41/08; H01L41/22; H03B5/32; (IPC1-7): H03B5/32; H01L41/08; H01L41/22; H03B5/02
Domestic Patent References:
| JP5679487A | ||||
| JP2137218A | ||||
| JP62122148A | ||||
| JP2183510A | ||||
| JP391227A | ||||
| JP6314449A |
Attorney, Agent or Firm:
Tomoyuki Takimoto