PURPOSE: To realize a microwave plasma etching device, which is capable of adjusting a magnetic field intensity distribution and the coupling mode of a microwave in the device and is miniaturized.
CONSTITUTION: A microwave plasma etching device is manufactured into a structure, wherein the device is provided with a treating chamber, a microwave feeding means for feeding a microwave in order to generate plasma in the treating chamber and a magnetic field generating means for generating a magnetic field, the treating chamber is put in the magnetic field which is generated by the magnetic field generating means 19, whereby a sample is etched using the plasma generated in the treating chamber as high-density plasma. The microwave feeding means is constituted of a microwave oscillator 4, annular antennas, which are provided at the upper part of the treating chamber, and a microwave distributor 6, which disperses equally a microwave generated by the oscillator 4 and applies the microwave to the antennas, the means 19 is constituted of two pieces of permanent magnets, which are arranged in opposition to each other holding the sample between them, at least one side of the two pieces of the permanent magnets is movably designed and the arrangement interval between the magnets is adjustably designed.
KAWAURA HIROSHI
SHIBATA FUMIO
KOMOTO TETSUYA
CANON SALES CO INC