Title:
MICROWAVE PLASMA TREATING DEVICE
Document Type and Number:
Japanese Patent JPH04247876
Kind Code:
A
Abstract:
PURPOSE: To subject a large-area substrate to a uniform treatment in its diametral direction concerning the plasma treatment using microwaves.
CONSTITUTION: A microwave lens 3 consisting of dielectrics or metal is installed into a waveguide 1 in which the microwaves propagate or into an electromagnetic horn connected to the waveguide 1. The microwaves are converted from spherical waves to plane waves or from the plane waves to the spherical waves by the microwave lens 3 and the microwaves are made into the uniform plane waves of a large area in the final, which are supplied into a plasma chamber. As a result, the uniform and large area treatment is possible at the time of the plasma treatment, such as sputtering, CVD and etching.
Inventors:
OSHIMA TAKAHARU
KAWAI YOSHINOBU
HIDAKA RYOTA
ONO TOSHIRO
KAWAI YOSHINOBU
HIDAKA RYOTA
ONO TOSHIRO
Application Number:
JP587291A
Publication Date:
September 03, 1992
Filing Date:
January 22, 1991
Export Citation:
Assignee:
NIPPON STEEL CORP
AFUTEI KK
AFUTEI KK
International Classes:
C23C14/34; C23C16/50; C23C16/511; C23F4/00; H01L21/205; H01L21/285; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): C23C14/34; C23C16/50; C23F4/00; H01L21/205; H01L21/285; H01L21/302; H01L21/31
Domestic Patent References:
| JPH02137223A | 1990-05-25 | |||
| JPS60105195A | 1985-06-10 |
Attorney, Agent or Firm:
Aoki Akira (4 outside)