Title:
MOLECULAR BEAM CRYSTAL GROWTH APPARATUS
Document Type and Number:
Japanese Patent JPH04303922
Kind Code:
A
Abstract:
PURPOSE: To prevent an MBE growth layer from being contaminated with Mn at a molecular beam crystal growth apparatus.
CONSTITUTION: At a molecular beam crystal growth apparatus, at least a protective part 24 at a shroud 23 for a K cell 18 for gallium use is formed of a high- melting-point metal material 25 whose melting point is at 1500°C or higher. Even when the component of the high-melting-point metal material 25 has adhered to the K cell 23 for gallium use, it is possible to avoid that moleculaes for the high-melting-point metal material reach a wafer 15. As a result, it is possible to completely prevent the high-melting-point metal material 25 from being taken into an MBE growth layer as impurities.
Inventors:
YUKIMOTO TOMIHISA
NAKADA HIROYUKI
TAKAHASHI NUSHITO
TAGAMI TOMONORI
TAMURA NAOYUKI
NAKADA HIROYUKI
TAKAHASHI NUSHITO
TAGAMI TOMONORI
TAMURA NAOYUKI
Application Number:
JP9367291A
Publication Date:
October 27, 1992
Filing Date:
March 29, 1991
Export Citation:
Assignee:
HITACHI LTD
International Classes:
C30B23/08; H01L21/203; (IPC1-7): C30B23/08; H01L21/203
Attorney, Agent or Firm:
Kajiwara Tatsuya
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