To provide a molecular beam epitaxy device whose cleaning time can be reduced, to provide its cleaning method, to provide a wafer and to provide its manufacturing method.
In the molecular beam epitaxy device 1, an RF power source 6 is connected to a shroud 3 provided in a deposition chamber 2 and insulated from ground potential via a matching box 7 and one or more kinds of gases selected from the group consisting of Cl2, SiCl4, BCl3, CCl2F2, BBr3, Br2, CH4, Ar, H2, He, HBr and HI are introduced into the deposition chamber 2 from a gas introducing system 8. Plasma P is generated in the deposition chamber 2 by supplying RF power to the shroud 3 from the RF power source 6 and accumulated material stuck to the surface of the shroud 3 is removed by the plasma P to be discharged outside of the molecular beam epitaxy device 1 by a vacuum pump 15. The cleaning method for the device, the wafer manufactured by using these and manufacturing method of the wafer are also provided.
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai