PURPOSE: To deposit a thin amorphous film on a substrate under free deposition conditions in the stage of forming the thin film of amorphous silicon by a glow discharge method, etc. on the surface of the substrate by separating the activating part of a gaseous raw material and a deposition part for amorphous silicon and coupling the same under vacuum.
CONSTITUTION: A deposition part 2 for a thin film of amorphous silicon and a ray source part 1 which activates a gaseous raw material for amorphous silicon are separated but are coupled in a vacuum state in the stage of depositing and forming the thin film of amorphous silicon on the surface of a substrate 6 by a glow discharge method or sputtering method. Gaseous SiH4 or SiF4 which is a raw material for silicon is activated in a chamber 3 for activating main raw material in the part 1. An auxiliary raw material such as gaseous H2, F2 or the like is activated in a chamber 4 for activating the auxiliary raw material. Gaseous raw materials B2H6, PH3, etc. for a slight amt. of impurities to be introduced into the amorphous silicon are activated in a chamber 5 for activating the impurities. An electric field is applied to the electrodes 8, 9, 10 in said chambers and the activated gases in the respective chambers are fed into the part 2 so that the thin film of the amorphous silicon contg. the intended impurities is formed under free deposition conditions on the substrate 6.
KATAYAMA YOSHIFUMI
KANEHISA OSAMU
MANABE TOSHIKATSU
| JPS52143980A | 1977-11-30 | |||
| JPS5216482A | 1977-02-07 |
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