Title:
多層接合型光電変換素子およびその製造方法
Document Type and Number:
Japanese Patent JP7247421
Kind Code:
B2
Abstract:
The present embodiment provides a semiconductor element that can generate power with high efficiency and has high durability.A multilayer junction photoelectric conversion element according to an embodiment comrises:a first electrode;a first photoactive layer including a perovskite semiconductor;a first passivation layer;a first doped layer;a second photoactive layer containing silicon; anda second electrode, in this order. The multilayer junction photoelectric conversion element further comprises a light scattering layer including a plurality of mutually separated silicon alloy layers that penetrate a part of the passivation layer and electrically connect the first photoactive layer and the first doped layer. The element can be manufactured by a method including forming a bottom cell including a second active layer and then forming a first photoactive layer by coating.
Inventors:
Takeshi Gotanda
Tomohiro Tohari
Minoru Saida
Tomohiro Tohari
Minoru Saida
Application Number:
JP2022527239A
Publication Date:
March 28, 2023
Filing Date:
November 16, 2020
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Energy Systems Co., Ltd.
Toshiba Energy Systems Co., Ltd.
International Classes:
H10K30/81; H10K30/40; H10K30/57; H10K39/15
Domestic Patent References:
| JP2018093168A | ||||
| JP2013106025A | ||||
| JP2011014894A | ||||
| JP2019036598A | ||||
| JP2019009402A | ||||
| JP2019195111A |
Foreign References:
| WO2010087312A1 | ||||
| KR1020190053374A | ||||
| WO2017195722A1 | ||||
| WO2011077963A1 |
Attorney, Agent or Firm:
Miyajima Manabu
Takeshi Sekine
Maekawa Hideaki
Takeshi Sekine
Maekawa Hideaki