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Title:
半導体不揮発性メモリ装置
Document Type and Number:
Japanese Patent JP2529394
Kind Code:
B2
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Inventors:
高田 隆
Application Number:
JP15181089A
Publication Date:
August 28, 1996
Filing Date:
June 14, 1989
Export Citation:
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Assignee:
松下電器産業株式会社
International Classes:
G11C17/00; G11C16/06; (IPC1-7): G11C16/06
Other References:
IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHICAL PAPERS=1988
IEEE JOURNAL OF SOLID-STATE CIRCUITS=1985
IEEEJOURNAL OF SOLID-STATE CIRCUITS=1988
Attorney, Agent or Firm:
滝本 智之



 
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